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| NTA4153N, NTE4153N Small Signal MOSFET 20 V, 915 mA, Single N-Channel with ESD Protection, SC-75 and SC-89 Features * * * * * * * * Low RDS(on) Improving System Efficiency Low Threshold Voltage, 1.5 V Rated ESD Protected Gate Pb-Free Packages are Available http://onsemi.com V(BR)DSS RDS(on) TYP 0.127 W @ 4.5 V 20 V 0.170 W @ 2.5 V 0.242 W @ 1.8 V 0.500 W @ 1.5 V 3 N-Channel MOSFET 915 mA ID MAX Applications Load/Power Switches Power Supply Converter Circuits Battery Management Portables like Cell Phones, PDAs, Digital Cameras, Pagers, etc. MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current Steady TA = 25C State TA = 85C Steady State tp =10 ms Symbol VDSS VGS ID Value 20 6.0 915 660 PD IDM TJ, TSTG IS TL 300 1.3 -55 to 150 280 260 mW A 3 Units V V mA 1 2 MARKING DIAGRAM & PIN ASSIGNMENT SC-75 / SOT-416 CASE 463 2 STYLE 5 3 Drain XX MG G 1 Gate 2 Source Operating Junction and Storage Temperature Continuous Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) C 3 1 mA C 2 1 SC-89 CASE 463C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient - Steady State (Note 1) SC-75 / SOT-416 SC-89 Symbol RqJA 416 400 Value Units C/W XX = Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. SC-75, SC-89 Gate 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 3 Drain Source 2 Top View ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2007 1 March, 2007 - Rev. 5 Publication Order Number: NTA4153N/D NTA4153N, NTE4153N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, VDS = 16 V VDS = 0 V, VGS = 4.5 V VGS = 0 V, ID = 250 mA 20 26 18.4 100 1.0 V mV/C nA mA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH) VGS(TH)/TJ RDS(on) VGS = 4.5 V, ID = 600 mA VGS = 2.5 V, ID = 500 mA VGS = 1.8 V, ID = 350 mA VGS = 1.5 V, ID = 40 mA Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = 4.5 V, VDD = 10 V, ID = 0.2 A, RG = 10 W 3.7 4.4 25 7.6 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = 4.5 V, VDS = 10 V, ID = 0.2 A VGS = 0 V, f = 1.0 MHz, VDS = 16 V 110 16 12 1.82 0.2 0.3 0.42 nC pF gFS VDS = 10 V, ID = 400 mA VGS = VDS, ID = 250 mA 0.45 0.76 -2.15 127 170 242 500 1.4 230 275 700 9500 S 1.1 V mV/C mW DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 200 mA TJ = 25C TJ = 125C 0.67 0.54 1.1 V 2. Pulse Test: pulse width 300ms, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device NTA4153NT1 NTA4153NT1G NTE4153NT1G Marking (XX) TR TR TP Package SC-75 / SOT-416 SC-75 / SOT-416 (Pb-Free) SC-89 (Pb-Free) Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NTA4153N, NTE4153N TYPICAL ELECTRICAL CHARACTERISTICS 1.2 2.0 V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 1.0 VGS = 2.6 V to 5.0 V 0.8 0.6 0.4 0.2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1.6 V 1.4 V 0 0 0.4 0.8 1.2 1.8 V 1.0 0.8 0.6 0.4 TJ = 125C 0.2 TJ = -55C 1.6 2.0 1.2 VDS w 10 V TJ = 25C VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics 0.4 VGS = 4.5 V 0.3 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.4 Figure 2. Transfer Characteristics VGS = 2.5 V 0.3 TJ = 125C 0.2 TJ = 25C TJ = -55C 0.1 0.2 TJ = 125C TJ = 25C 0.1 TJ = -55C 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Drain Current and Temperature 1.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = 0.35 A VGS = 4.5 V C, CAPACITANCE (pF) Figure 4. On-Resistance vs. Drain Current and Temperature 200 TJ = 25C VGS = 0 V 160 CISS 120 1.4 1.2 1.0 80 COSS CRSS 0 4 8 12 16 20 0.8 40 0.6 -50 -25 0 25 50 75 100 125 150 0 TJ, JUNCTION TEMPERATURE (C) DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 NTA4153N, NTE4153N TYPICAL ELECTRICAL CHARACTERISTICS VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5 IS, SOURCE CURRENT (AMPS) QT 4 0.6 VGS = 0 V 0.5 0.4 0.3 0.2 0.1 TJ = 25C 0 0 0.4 0.8 1.2 1.6 QG, TOTAL GATE CHARGE (nC) 2.0 TJ = 125C 3 QGS QGD 2 1 0 ID = 0.2 A TA = 25C 0 0.2 0.4 0.6 0.8 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 7. Gate-to-Source Voltage vs. Total Gate Charge Figure 8. Diode Forward Voltage vs. Current r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE 1.0 D = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 10 100 1000 Figure 9. Normalized Thermal Response http://onsemi.com 4 NTA4153N, NTE4153N PACKAGE DIMENSIONS SC-75/SOT-416 CASE 463-01 ISSUE F -E- 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 INCHES NOM 0.031 0.002 0.008 0.006 0.063 0.031 0.04 BSC 0.004 0.006 0.061 0.063 MIN 0.027 0.000 0.006 0.004 0.059 0.027 e 1 -D- b 3 PL 0.20 (0.008) M D HE 0.20 (0.008) E DIM A A1 b C D E e L HE MAX 0.035 0.004 0.012 0.010 0.067 0.035 0.008 0.065 C A L A1 STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NTA4153N, NTE4153N PACKAGE DIMENSIONS SC-89 CASE 463C-03 ISSUE C A -X- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C-01 OBSOLETE, NEW STANDARD 463C-02. MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF --- --- 10 _ --- --- 10 _ 1.50 1.60 1.70 INCHES NOM MAX 0.063 0.067 0.034 0.040 0.028 0.031 0.011 0.013 0.020 BSC 0.021 REF 0.004 0.006 0.008 0.012 0.016 0.020 0.043 REF --- --- 10 _ --- --- 10 _ 0.059 0.063 0.067 MIN 0.059 0.030 0.024 0.009 3 1 2 B -Y- S K G 2 PL DIM A B C D G H J K L M N S D 0.08 (0.003) M 3 PL XY M C N J -T- SEATING PLANE SOLDERING FOOTPRINT* 0.53 0.020 0.53 0.020 1.10 0.043 1.00 0.039 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 NTA4153N/D |
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